Compound semiconductor

• Compound semiconductors (8)

  • GaAs
  • Gallium nitride
  • Indium arsenide
  • ZnSe
  • Metalorganics
  • Metalorganics
  • Trimethylgallium
  • Trimethylindium
  • Zinc sulfide
  • more...

• Semiconductors (104)

  • Band gap
  • Conduction band
  • Dopant
  • Electron mobility
  • HB LED
  • HB LED
  • Heterojunction
  • Lattice constant
  • Minority carrier
  • N-type semiconductor
  • P-type
  • Pn junction
  • Semiconductor device
  • Semiconductor devices
  • Semiconductor manufacturing
  • Semiconductor material
  • Semiconductor materials
  • Silicon on insulator
  • Solid State Devices
  • Strained silicon
  • Valence band
  • Acceptor (semiconductors)
  • Airgap
  • Anderson's rule
  • Anomalous photovoltaic effect
  • Band diagram
  • Band offset
  • Cadmium oxide
  • Carbon nanofoam
  • Carrier lifetime
  • Compound semiconductors
  • Current crowding
  • Current injection technique
  • Degenerate semiconductor
  • Depletion region
  • Die shrink
  • Diffusion capacitance
  • Direct and indirect band gaps
  • Donor (semiconductors)
  • Electronic band structure
  • Equivalent oxide thickness
  • Etch pit density
  • Extrinsic semiconductor
  • Field-effect transistor (FET operation)
  • Floating body effect
  • Gate dielectric
  • Haynes - Shockley experiment
  • Homojunction
  • Hot carriers injection
  • Hot electron
  • Impact ionization
  • International Electron Devices Meeting
  • International Technology Roadmap for Semiconductors
  • International Technology Roadmap for Semiconductors lithography nodes
  • Intrinsic semiconductor
  • Isobutylgermane
  • Isotropic etching
  • Low-K
  • Luttinger parameter
  • Luxtera
  • Metal gate
  • Metal-induced gap states
  • Metal-semiconductor junction
  • Metalorganics
  • Moisture Sensitivity Level
  • Multi-site test
  • Narrow gap semiconductor
  • Negative bias temperature instability
  • Negative luminescence
  • Nemotek Technologie
  • On-die termination
  • Overdrive voltage
  • P-i-n and n-i-p
  • P-n junction isolation
  • Photo-Dember
  • Proximity communication
  • QBD (electronics)
  • Quantum heterostructure
  • Random logic
  • Reliability (semiconductor)
  • Reverse leakage current
  • Roll-to-roll processing
  • SILC (semiconductors)
  • Schottky barrier
  • Semiconductor analysis
  • Semiconductor carrier mobility
  • Semiconductor companies
  • Semiconductor journals
  • Semiconductor physicists
  • SensorDynamics
  • Sheet resistance
  • Silicate glass
  • Strain engineering
  • Thermal copper pillar bump
  • Thin-film transistor
  • Transmission line measurement
  • Trimethylgallium
  • Trimethylindium
  • Velocity overshoot
  • Velocity saturation
  • Voltage reference
  • Wide bandgap semiconductors
  • ZnO based Diluted Magnetic Semiconductors
  • austriamicrosystems
  • k·p perturbation theory
  • more...

• Semiconductor devices (32)

  • Emcore
  • Multi-junction
  • Clean Energy Project
  • Digital micromirror device
  • Diodes
  • Diodes
  • Gate oxide
  • HB LED
  • HT12X Remote Control Devices
  • Haitz's Law
  • Inchrosil
  • Integrated circuit
  • Integrated circuits
  • LDMOS
  • LED lamp
  • Low-cost photovoltaic cell
  • MAX232
  • MOS composite static induction thyristor
  • Metal rectifier
  • Micromirror device
  • Oscillistor
  • Oxide thin film transistor
  • Position sensitive device
  • Power semiconductor device
  • Proper zero signal collector current
  • SIT/SITh (Static Induction Transistor- /Thyristor)
  • Secondary breakdown
  • Semiconductor device
  • Semiconductor fuse
  • Shockley–Queisser limit
  • Solid state switches
  • Solid-state lighting
  • Transistor
  • more...

• Transistor types

  • IGFET
  • Bipolar transistor
  • Field effect transistor
  • HEMT

• Semiconductor device fabrication (110)

  • Chemical mechanical polishing
  • Chemical vapor deposition
  • Doped
  • Dry etching
  • Epitaxy
  • Epitaxy
  • Etching (microfabrication)
  • Ion implantation
  • Ohmic contact
  • Physical vapor deposition
  • Plasma etch
  • Semiconductor industry
  • Semiconductor wafer
  • Wire bonder
  • Advanced Silicon Etch
  • Airgap
  • Alfred Y. Cho
  • B-staging
  • Ball bonding
  • Barrier metal
  • Borophosphosilicate glass
  • Capacitance voltage profiling
  • Channel-stopper
  • Cleanroom
  • Coining, Inc.
  • Dark current spectroscopy
  • Deal-Grove model
  • Deep reactive-ion etching
  • Device under test
  • Die attachment
  • Die preparation
  • Electron beam induced current
  • Electrostatic spray assisted vapour deposition
  • Epiwafer
  • Equipment semiconductor companies
  • Evaporation (deposition)
  • Fabless semiconductor companies
  • Fabless semiconductor company
  • Finetech
  • Focused ion beam
  • Foundry semiconductor companies
  • Furnace anneal
  • Gas immersion laser doping
  • Gate count
  • Hardmask
  • Health hazards in semiconductor manufacturing occupations
  • Integrated circuit encapsulation
  • Integrated circuit packaging
  • Integrated device manufacturer
  • Ion beam
  • Ion beam lithography
  • Ion beam mixing
  • Kinetic Monte Carlo surface growth method
  • Laser trimming
  • Lift-off (microtechnology)
  • Lithography (microfabrication)
  • Low temperature co-fired ceramic
  • MOSIS
  • Metal-induced crystallization
  • Metalorganic chemical vapor deposition
  • Microfabrication
  • Multi-project wafer service
  • Negative bias temperature instability
  • Non-contact wafer testing
  • Oramir
  • Overlay Control
  • PROLITH
  • Package on package
  • Packaging (microfabrication)
  • Phenol formaldehyde resin
  • Phosphosilicate glass
  • Planar process
  • Plasma ashing
  • Plasma cleaning
  • Plasma etcher
  • Plasma-immersion ion implantation
  • Process design kit
  • Product engineering
  • Pulsed laser deposition
  • RCA clean
  • Rapid thermal processing
  • Reactive-ion etching
  • Reliability (semiconductor)
  • Resist
  • Rigid needle adapter
  • SECS/GEM
  • Salicide
  • Semiconductor Equipment and Materials International
  • Semiconductor companies
  • Semiconductor fabrication equipment
  • Semiconductor fabrication plant
  • Semiconductor growth
  • Shallow trench isolation
  • Silicate glass
  • Silicon on sapphire
  • Silicon wafer producers
  • Smart Cut
  • Spin coating
  • Spreading Resistance Profiling
  • Sputter deposition
  • Substrate mapping
  • Tetrakis(d- imethylamido)titanium
  • Three-dimensional integrated circuit
  • Through-silicon via
  • Titanium nitride
  • Trimethylgallium
  • Vapour phase decomposition
  • Wafer dicing
  • Wafer fabrication
  • Wafer testing
  • Wafer-scale integration
  • more...

• Condensed matter physics (10)

  • Effective mass (solid-state physics)
  • Crystal growth
  • Ohmic contact
  • Electron mobility
  • Conduction band
  • Conduction band
  • Band gap
  • Valence band
  • Minority carrier
  • Doped
  • Lattice constant
  • more...

• Semiconductor materials (81)

  • AlGaAs
  • AlGaN
  • Amorphous silicon
  • III-V semiconductor
  • InGaAs
  • InGaAs
  • InGaN
  • InSb
  • Indium phosphide
  • Multicrystalline silicon
  • Organic semiconductors
  • Silicon germanium
  • Aluminium antimonide
  • Aluminium arsenide
  • Aluminium gallium indium phosphide
  • Aluminium gallium phosphide
  • Aluminium indium arsenide
  • Aluminium nitride
  • Aluminium phosphide
  • Beryllium telluride
  • Bismuth telluride
  • Black silicon
  • Boron arsenide
  • Boron nitride
  • Boron phosphide
  • CIGS solar cells
  • Cadmium arsenide
  • Cadmium selenide
  • Cadmium sulfide
  • Cadmium telluride
  • Cadmium zinc telluride
  • Copper indium gallium selenide
  • Copper(I) oxide
  • Copper(II) chloride
  • Copper(II) oxide
  • Diamond
  • Diamond flaws
  • Float-zone silicon
  • GaAs
  • Gallium antimonide
  • Gallium arsenide phosphide
  • Gallium indium arsenide antimonide phosphide
  • Gallium manganese arsenide
  • Gallium nitride
  • Gallium phosphide
  • Germanium
  • Graphene
  • Indium arsenide
  • Indium gallium phosphide
  • Indium nitride
  • Indium(III) oxide
  • Indium(III) sulfide
  • Iron phosphide
  • Lead selenide
  • Lead telluride
  • Lead(II) iodide
  • Lead(II) sulfide
  • Light-emitting diode materials
  • List of silicon producers
  • Magnetic semiconductor
  • Mercury telluride
  • Mercury zinc telluride
  • Mercury(II) cadmium(II) telluride
  • Mercury(II) iodide
  • Molecular wires
  • Molybdenum disilicide
  • Molybdenum disulfide
  • Nanocrystalline silicon
  • Platinum silicide
  • Porous silicon
  • Silicon
  • Silicon carbide
  • Silver telluride
  • Strained silicon
  • Tin dioxide
  • Tin telluride
  • Tungsten disilicide
  • Uranium dioxide
  • Zinc oxide
  • Zinc sulfide
  • Zinc telluride
  • ZnSe
  • more...

• Indium compounds (29)

  • Aluminium gallium indium phosphide
  • Aluminium indium arsenide
  • Copper indium gallium selenide
  • Cyclopenta- dienylindium(I)
  • Field's metal
  • Field's metal
  • Galinstan
  • Gallium indium arsenide antimonide phosphide
  • InGaAs
  • InGaN
  • InSb
  • Indium arsenide
  • Indium chalcogenides
  • Indium gallium aluminium nitride
  • Indium gallium phosphide
  • Indium halides
  • Indium minerals
  • Indium nitride
  • Indium phosphide
  • Indium tin oxide
  • Indium(I) bromide
  • Indium(III) bromide
  • Indium(III) chloride
  • Indium(III) fluoride
  • Indium(III) oxide
  • Indium(III) selenide
  • Indium(III) sulfate
  • Indium(III) sulfide
  • Indium(III) telluride
  • Trimethylindium
  • more...

• Thin film deposition (38)

  • Atomic layer deposition
  • MOCVD
  • Molecular beam epitaxy
  • Atomic layer epitaxy
  • Cathodic arc deposition
  • Cathodic arc deposition
  • Chemical beam epitaxy
  • Chemical vapor deposition
  • Conformal film
  • Diamond-like carbon
  • Electron beam physical vapor deposition
  • Electrostatic spray assisted vapour deposition
  • Epitaxy
  • Evaporation
  • Evaporation (deposition)
  • Focused ion beam
  • Hull cell
  • Hybrid Physical-Chemical Vapor Deposition
  • Ion beam
  • Ion beam assisted deposition
  • Ion beam deposition
  • Ion plating
  • Kinetic Monte Carlo surface growth method
  • List of coating techniques
  • Metal plating
  • Physical vapor deposition
  • Plating
  • Pulsed laser deposition
  • Silicon on sapphire
  • Sol-gel
  • Spin coating
  • Sputter cleaning
  • Sputter deposition
  • Thermal barrier coating
  • Thermal spraying
  • Tinning
  • Trimethylgallium
  • Trimethylindium
  • Vacuum deposition
  • more...

• Gallium compounds (36)

  • AlGaAs
  • AlGaN
  • Aluminium gallium indium phosphide
  • Aluminium gallium phosphide
  • Copper indium gallium selenide
  • Copper indium gallium selenide
  • Digallane
  • GaAs
  • Gadolinium gallium garnet
  • Galinstan
  • Gallium antimonide
  • Gallium arsenide phosphide
  • Gallium halides
  • Gallium indium arsenide antimonide phosphide
  • Gallium maltolate
  • Gallium manganese arsenide
  • Gallium nitrate
  • Gallium nitride
  • Gallium phosphide
  • Gallium trichloride
  • Gallium(II) selenide
  • Gallium(II) sulfide
  • Gallium(II) telluride
  • Gallium(III) bromide
  • Gallium(III) fluoride
  • Gallium(III) hydroxide
  • Gallium(III) iodide
  • Gallium(III) oxide
  • Gallium(III) selenide
  • Gallium(III) telluride
  • InGaAs
  • InGaN
  • Indium gallium aluminium nitride
  • Indium gallium phosphide
  • Lanthanum gallium silicate
  • Organogallium chemistry
  • Trimethylgallium
  • more...

• Semiconductor growth (13)

  • Single crystal
  • Boule (crystal)
  • Bridgmanâ€- “Stockbarger technique
  • Chemical beam epitaxy
  • Czochralski process
  • Czochralski process
  • Float-zone silicon
  • Knudsen Cell
  • MOCVD
  • Micro-pulling-down
  • Molecular beam epitaxy
  • Recrystallization (chemistry)
  • Trimethylindium
  • Zone melting
  • more...

• Nitrides (39)

  • Nitride
  • AlGaN
  • Aluminium nitride
  • Aluminium oxynitride
  • Beryllium nitride
  • Beryllium nitride
  • Beta carbon nitride
  • Borazon
  • Boron nitride
  • Calcium nitride
  • Chromium nitride
  • Dicyanoacetylene
  • Disulfur dinitride
  • Gallium nitride
  • Heterodiamond
  • Hexachloro- phosphazene
  • InGaN
  • Indium gallium aluminium nitride
  • Indium nitride
  • Iron nitride
  • Lithium nitride
  • Magnesium nitride
  • Nanomesh
  • Niobium nitride
  • Polythiazyl
  • Sialon
  • Silicon nitride
  • Sodium nitride
  • Strontium nitride
  • Tantalum nitride
  • Tetrasulfur tetranitride
  • Thiazyl fluoride
  • Thiazyl trifluoride
  • Titanium nitride
  • Tungsten nitride
  • Uranium nitride
  • Vanadium nitride
  • Yttrium nitride
  • Zinc nitride
  • Zirconium nitride
  • more...

• Infrared sensor materials (14)

  • Amorphous silicon
  • Barium titanate
  • Germanium
  • InGaAs
  • InSb
  • InSb
  • Infrared photovoltaics
  • Lead scandium tantalate
  • Lead selenide
  • Lead zirconate titanate
  • Lead(II) sulfide
  • Mercury zinc telluride
  • Mercury(II) cadmium(II) telluride
  • Platinum silicide
  • Vanadium(V) oxide
  • more...

• Light-emitting diode manufacturers (10)

  • Cree Inc
  • Lumileds
  • Seoul Semiconductor
  • Epistar
  • Everlight Electronics
  • Everlight Electronics
  • Kingbright
  • NeoPac
  • Nichia Corporation
  • Osram Opto Semiconductors GmbH
  • SmartSlab
  • more...

• Technology companies

  • Aixtron AG
  • Avago Technologies
  • Rfmd
  • M/A-COM

• See also (20)

  • Inorganic compounds
  • Silicide
  • Semiconductor laser
  • Nanophotonic
  • Optics
  • Optics
  • Photonics
  • Photonic bandgap
  • Avago
  • Optoelectronic device
  • Chemical substance
  • Compound annual growth rate
  • Active layer
  • Optical cable
  • Photocurrent
  • Quantum well
  • Epoxy molding compound
  • Optical fiber
  • Plastic optical fiber
  • FEOL
  • Charge carriers
  • more...

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